 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 1. product profile 1.1 general description the BGU6104 mmic is an unmatched wideband mmic featuring an integrated bias, enable function and wide supply voltage. bgu610 4 is part of family of three products (bgu6101, bgu6102 and BGU6104) an d is optimized for 4 ma operation. 1.2 features and benefits ? supply voltage range from 1.5 v to 5 v ? current range up to 40 ma at 3 v and 50 ma at 5 v supply voltage ? nf min of 0.8 db ? applicable between 40 mhz and 4 ghz ? integrated temper ature stabilized bias for easy design ? bias current configurable with external resistor ? power-down mode current consumption < 6 ? a ? esd protection on all pins up to 3 kv hbm ? small 6-pin leadless package 2.0 mm ? 1.3 mm ? 0.35 mm 1.3 applications 1.4 quick reference data BGU6104 wideband silicon low-no ise amplifier mmic rev. 2 ? 3 february 2012 product data sheet ? fm radio ? rke, tpms ? mobile tv, cmmb ? amr, zigbee, bluetooth ? ism ? wifi, wlan(2.4 ghz) ? wireless security ? low current applications table 1. quick reference data t amb =25 ? c; v cc = 3.0 v; i cc(tot) = 6.0 ma; v enable ? 1.2 v unless other wise specified. all measurements done on characterization board without matching, de-embedded up to the pins. symbol parameter conditions min typ max unit ?s 21 ? 2 insertion power gain f = 450 mhz - 22.5 - db f = 900 mhz - 18.5 - db f = 2400 mhz; i cc(tot) = 12 ma - 12.8 - db nf min minimum noise figure f = 450 mhz - 0.8 - db f = 900 mhz - 0.8 - db f = 2400 mhz; i cc(tot) =12ma - 1.1 - db
BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 2 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 2. pinning information 2.1 pinning 2.2 pin description 3. ordering information p l(1db) output power at 1 db gain compression f = 450 mhz - 0.5 - dbm f = 900 mhz - 0.5 - dbm f = 2400 mhz; i cc(tot) =12ma - 6.5 - dbm ip3 o output third-order intercept point f = 450 mhz - 11 - dbm f = 900 mhz - 12 - dbm f = 2400 mhz; i cc(tot) = 12 ma - 18.5 - dbm table 1. quick reference data ?continued t amb =25 ? c; v cc = 3.0 v; i cc(tot) = 6.0 ma; v enable ? 1.2 v unless other wise specified. all measurements done on characterization board without matching, de-embedded up to the pins. symbol parameter conditions min typ max unit fig 1. pin configuration 1 2 3 6 5 4 transparent top view table 2. pin description symbol pin description v cc 1 supply voltage n.c. 2 not connected rf_in 3 rf in rf_out 4 rf out enable 5 enable cur_adj 6 current adjust gnd gnd ground pad; rf and dc ground table 3. ordering information type number package name description version BGU6104 hxson6 plastic thermal enhanced super thin small outline package; no leads; 6 terminals; body 2 x 1.3 x 0.35 mm sot1209 BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 3 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 4. marking 5. limiting values [1] due to internal esd diode protection, the applied voltage should not exceed the specified maximum in order to avoid excess current. [2] the rf input is directly coupled to the base of the rf transistor. 6. thermal characteristics table 4. marking type number marking description BGU6104 1c* * = p : made in hong kong * = t : made in malaysia * = w : made in china table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage rf input ac coupled - 5.5 v v enable voltage on pin enable [1] ? 0.5 v cc +1.8 v v rf_in voltage on pin in dc [2] ? 0.5 0.9 v v rf_out voltage on pin rf_out dc ? 0.5 v cc +1.8 v i cc(tot) total supply current v cc = 5.0 v - 50 ma t stg storage temperature ? 55 +150 ?c t j junction temperature - +150 ?c v esd electrostatic discharge voltage human body model (hbm); according jedec standard 22-a114e - 3000 v charged device model (cdm); according jedec standard 22-c101b - 500 v table 6. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 110 k/w BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 4 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 7. static characteristics [1] i cc(tot) = i cc + i rf_out + i r_bias . [2] configurable with external resistor. table 7. static characteristics symbol parameter conditions min typ max unit v cc supply voltage rf input ac coupled 1.5 - 5.0 v i cc(tot) total supply current v cc = 3.0 v [1] [2] 3.7 - 40 ma v enable ? 0.4 v [1] - - 0.01 ma t amb ambient temperature ? 40 +25 +85 ?c BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 5 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 8. dynamic characteristics table 8. dynamic characteristics t amb =25 ? c; v cc = 3.0 v; v enable ? 1.2 v unless otherwise specif ied. all measurements done on characterization board without matc hing, de-embedded up to the pins. symbol parameter conditions min typ max unit 100 mhz frequency ?s 21 ? 2 insertion power gain f = 100 mhz i cc(tot) = 4 ma - 21.5 - db i cc(tot) = 6 ma - 25.0 - db i cc(tot) = 12 ma - 29.5 - db i cc(tot) = 20 ma - 32.0 - db i cc(tot) = 40 ma - 35.0 - db msg maximum stable gain f = 100 mhz i cc(tot) = 4 ma - 29.5 - db i cc(tot) = 6 ma - 31.0 - db i cc(tot) = 12 ma - 33.5 - db i cc(tot) = 20 ma - 35.5 - db i cc(tot) = 40 ma - 37.5 - db nf min minimum noise figure f = 100 mhz i cc(tot) = 4 ma - 0.8 - db i cc(tot) = 6 ma - 0.8 - db i cc(tot) = 12 ma - 0.8 - db i cc(tot) = 20 ma - 0.9 - db i cc(tot) = 40 ma - 1.2 - db p l(1db) output power at 1 db gain compression f = 100 mhz i cc(tot) = 4 ma - ? 1.0 - dbm i cc(tot) = 6 ma - 1.0 - dbm i cc(tot) = 12 ma - 6.0 - dbm i cc(tot) = 20 ma - 9.5 - dbm i cc(tot) = 40 ma - 15.0 - dbm ip3 o output third-order intercept point f = 100 mhz i cc(tot) = 4 ma - 9.5 - dbm i cc(tot) = 6 ma - 11.5 - dbm i cc(tot) = 12 ma - 16.0 - dbm i cc(tot) = 20 ma - 19.5 - dbm i cc(tot) = 40 ma - 26.0 - dbm BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 6 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 150 mhz frequency ?s 21 ? 2 insertion power gain f = 150 mhz i cc(tot) = 4 ma - 21.5 - db i cc(tot) = 6 ma - 24.5 - db i cc(tot) = 12 ma - 29.0 - db i cc(tot) = 20 ma - 31.5 - db i cc(tot) = 40 ma - 34.0 - db msg maximum stable gain f = 150 mhz i cc(tot) = 4 ma - 27.5 - db i cc(tot) = 6 ma - 29.0 - db i cc(tot) = 12 ma - 32.0 - db i cc(tot) = 20 ma - 33.5 - db i cc(tot) = 40 ma - 35.5 - db nf min minimum noise figure f = 150 mhz i cc(tot) = 4 ma - 0.8 - db i cc(tot) = 6 ma - 0.8 - db i cc(tot) = 12 ma - 0.8 - db i cc(tot) = 20 ma - 0.9 - db i cc(tot) = 40 ma - 1.2 - db p l(1db) output power at 1 db gain compression f = 150 mhz i cc(tot) = 4 ma - ? 1.0 - dbm i cc(tot) = 6 ma - 1.0 - dbm i cc(tot) = 12 ma - 5.5 - dbm i cc(tot) = 20 ma - 9.0 - dbm i cc(tot) = 40 ma - 15.0 - dbm ip3 o output third-order intercept point f = 150 mhz i cc(tot) = 4 ma - 9.5 - dbm i cc(tot) = 6 ma - 11.5 - dbm i cc(tot) = 12 ma - 16.0 - dbm i cc(tot) = 20 ma - 19.5 - dbm i cc(tot) = 40 ma - 26.0 - dbm table 8. dynamic characteristics ?continued t amb =25 ? c; v cc = 3.0 v; v enable ? 1.2 v unless otherwise specif ied. all measurements done on characterization board without matc hing, de-embedded up to the pins. symbol parameter conditions min typ max unit BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 7 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 450 mhz frequency ?s 21 ? 2 insertion power gain f = 450 mhz i cc(tot) = 4 ma - 20.0 - db i cc(tot) = 6 ma - 22.5 - db i cc(tot) = 12 ma - 25.5 - db i cc(tot) = 20 ma - 27.5 - db i cc(tot) = 40 ma - 28.5 - db msg maximum stable gain f = 450 mhz i cc(tot) = 4 ma - 23.0 - db i cc(tot) = 6 ma - 24.5 - db i cc(tot) = 12 ma - 27.0 - db i cc(tot) = 20 ma - 29.0 - db i cc(tot) = 40 ma - 30.5 - db nf min minimum noise figure f = 450 mhz i cc(tot) = 4 ma - 0.8 - db i cc(tot) = 6 ma - 0.8 - db i cc(tot) = 12 ma - 0.8 - db i cc(tot) = 20 ma - 0.9 - db i cc(tot) = 40 ma - 1.2 - db p l(1db) output power at 1 db gain compression f = 450 mhz i cc(tot) = 4 ma - ? 2.0 - dbm i cc(tot) = 6 ma - 0.5 - dbm i cc(tot) = 12 ma - 5.5 - dbm i cc(tot) = 20 ma - 10.0 - dbm i cc(tot) = 40 ma - 15.5 - dbm ip3 o output third-order intercept point f = 450 mhz i cc(tot) = 4 ma - 9.0 - dbm i cc(tot) = 6 ma - 11.0 - dbm i cc(tot) = 12 ma - 17.0 - dbm i cc(tot) = 20 ma - 20.5 - dbm i cc(tot) = 40 ma - 26.0 - dbm table 8. dynamic characteristics ?continued t amb =25 ? c; v cc = 3.0 v; v enable ? 1.2 v unless otherwise specif ied. all measurements done on characterization board without matc hing, de-embedded up to the pins. symbol parameter conditions min typ max unit BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 8 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 900 mhz frequency ?s 21 ? 2 insertion power gain f = 900 mhz i cc(tot) = 4 ma - 16.5 - db i cc(tot) = 6 ma - 18.5 - db i cc(tot) = 12 ma - 21.0 - db i cc(tot) = 20 ma - 22.5 - db i cc(tot) = 40 ma - 23.0 - db msg maximum stable gain f = 900 mhz i cc(tot) = 4 ma - 20.0 - db i cc(tot) = 6 ma - 21.5 - db i cc(tot) = 12 ma - 24.0 - db i cc(tot) = 20 ma - 25.5 - db i cc(tot) = 40 ma - 27.5 - db nf min minimum noise figure f = 900 mhz i cc(tot) = 4 ma - 0.9 - db i cc(tot) = 6 ma - 0.8 - db i cc(tot) = 12 ma - 0.8 - db i cc(tot) = 20 ma - 0.9 - db i cc(tot) = 40 ma - 1.1 - db p l(1db) output power at 1 db gain compression f = 900 mhz i cc(tot) = 4 ma - ? 2.0 - dbm i cc(tot) = 6 ma - 0.5 - dbm i cc(tot) = 12 ma - 6.0 - dbm i cc(tot) = 20 ma - 10.5 - dbm i cc(tot) = 40 ma - 16.0 - dbm ip3 o output third-order intercept point f = 900 mhz i cc(tot) = 4 ma - 9.5 - dbm i cc(tot) = 6 ma - 12.0 - dbm i cc(tot) = 12 ma - 18.0 - dbm i cc(tot) = 20 ma - 21.5 - dbm i cc(tot) = 40 ma - 24.0 - dbm table 8. dynamic characteristics ?continued t amb =25 ? c; v cc = 3.0 v; v enable ? 1.2 v unless otherwise specif ied. all measurements done on characterization board without matc hing, de-embedded up to the pins. symbol parameter conditions min typ max unit BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 9 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 1500 mhz frequency ?s 21 ? 2 insertion power gain f = 1500 mhz i cc(tot) = 4 ma - 13.0 - db i cc(tot) = 6 ma - 14.5 - db i cc(tot) = 12 ma - 17.0 - db i cc(tot) = 20 ma - 18.0 - db i cc(tot) = 40 ma - 19.0 - db msg maximum stable gain f = 1500 mhz i cc(tot) = 4 ma - 18.0 - db i cc(tot) = 6 ma - 19.5 - db i cc(tot) = 12 ma - 22.0 - db i cc(tot) = 20 ma - 23.0 - db i cc(tot) = 40 ma - 24.5 - db nf min minimum noise figure f = 1500 mhz i cc(tot) = 4 ma - 0.9 - db i cc(tot) = 6 ma - 0.9 - db i cc(tot) = 12 ma - 0.9 - db i cc(tot) = 20 ma - 1.0 - db i cc(tot) = 40 ma - 1.1 - db p l(1db) output power at 1 db gain compression f = 1500 mhz i cc(tot) = 4 ma - ? 1.5 - dbm i cc(tot) = 6 ma - 1.0 - dbm i cc(tot) = 12 ma - 6.5 - dbm i cc(tot) = 20 ma - 11.0 - dbm i cc(tot) = 40 ma - 16.5 - dbm ip3 o output third-order intercept point f = 1500 mhz i cc(tot) = 4 ma - 10.0 - dbm i cc(tot) = 6 ma - 13.0 - dbm i cc(tot) = 12 ma - 18.5 - dbm i cc(tot) = 20 ma - 20.0 - dbm i cc(tot) = 40 ma - 22.0 - dbm table 8. dynamic characteristics ?continued t amb =25 ? c; v cc = 3.0 v; v enable ? 1.2 v unless otherwise specif ied. all measurements done on characterization board without matc hing, de-embedded up to the pins. symbol parameter conditions min typ max unit BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 10 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 1900 mhz frequency ?s 21 ? 2 insertion power gain f = 1900 mhz i cc(tot) = 4 ma - 11.0 - db i cc(tot) = 6 ma - 12.5 - db i cc(tot) = 12 ma - 15.0 - db i cc(tot) = 20 ma - 16.0 - db i cc(tot) = 40 ma - 16.5 - db msg maximum stable gain f = 1900 mhz i cc(tot) = 4 ma - 17.0 - db i cc(tot) = 6 ma - 18.5 - db i cc(tot) = 12 ma - 20.5 - db i cc(tot) = 20 ma - 22.0 - db i cc(tot) = 40 ma - 23.0 - db nf min minimum noise figure f = 1900 mhz i cc(tot) = 4 ma - 1.1 - db i cc(tot) = 6 ma - 1.0 - db i cc(tot) = 12 ma - 1.0 - db i cc(tot) = 20 ma - 1.0 - db i cc(tot) = 40 ma - 1.2 - db p l(1db) output power at 1 db gain compression f = 1900 mhz i cc(tot) = 4 ma - ? 1.5 - dbm i cc(tot) = 6 ma - 1.5 - dbm i cc(tot) = 12 ma - 7.0 - dbm i cc(tot) = 20 ma - 11.5 - dbm i cc(tot) = 40 ma - 16.5 - dbm ip3 o output third-order intercept point f = 1900 mhz i cc(tot) = 4 ma - 9.5 - dbm i cc(tot) = 6 ma - 12.5 - dbm i cc(tot) = 12 ma - 18.0 - dbm i cc(tot) = 20 ma - 20.0 - dbm i cc(tot) = 40 ma - 21.0 - dbm table 8. dynamic characteristics ?continued t amb =25 ? c; v cc = 3.0 v; v enable ? 1.2 v unless otherwise specif ied. all measurements done on characterization board without matc hing, de-embedded up to the pins. symbol parameter conditions min typ max unit BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 11 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 2400 mhz frequency ?s 21 ? 2 insertion power gain f = 2400 mhz i cc(tot) = 4 ma - 9.0 - db i cc(tot) = 6 ma - 10.5 - db i cc(tot) = 12 ma - 12.5 - db i cc(tot) = 20 ma - 13.5 - db i cc(tot) = 40 ma - 14.5 - db msg maximum stable gain f = 2400 mhz i cc(tot) = 4 ma - 16.0 - db i cc(tot) = 6 ma - 17.5 - db i cc(tot) = 12 ma - 19.5 - db i cc(tot) = 20 ma - 20.5 - db i cc(tot) = 40 ma - 21.0 - db nf min minimum noise figure f = 2400 mhz i cc(tot) = 4 ma - 1.4 - db i cc(tot) = 6 ma - 1.2 - db i cc(tot) = 12 ma - 1.1 - db i cc(tot) = 20 ma - 1.2 - db i cc(tot) = 40 ma - 1.4 - db p l(1db) output power at 1 db gain compression f = 2400 mhz i cc(tot) = 4 ma - ? 1.5 - dbm i cc(tot) = 6 ma - 1.0 - dbm i cc(tot) = 12 ma - 6.5 - dbm i cc(tot) = 20 ma - 11.0 - dbm i cc(tot) = 40 ma - 16.0 - dbm ip3 o output third-order intercept point f = 2400 mhz i cc(tot) = 4 ma - 9.0 - dbm i cc(tot) = 6 ma - 11.0 - dbm i cc(tot) = 12 ma - 18.5 - dbm i cc(tot) = 20 ma - 20.0 - dbm i cc(tot) = 40 ma - 21.0 - dbm table 8. dynamic characteristics ?continued t amb =25 ? c; v cc = 3.0 v; v enable ? 1.2 v unless otherwise specif ied. all measurements done on characterization board without matc hing, de-embedded up to the pins. symbol parameter conditions min typ max unit BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 12 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 3500 mhz frequency ?s 21 ? 2 insertion power gain f = 3500 mhz i cc(tot) = 4 ma - 5.0 - db i cc(tot) = 6 ma - 7.0 - db i cc(tot) = 12 ma - 9.0 - db i cc(tot) = 20 ma - 10.0 - db i cc(tot) = 40 ma - 10.5 - db msg maximum stable gain f = 3500 mhz i cc(tot) = 4 ma - 15.0 - db i cc(tot) = 6 ma - 16.0 - db i cc(tot) = 12 ma - 16.0 - db i cc(tot) = 20 ma - 16.0 - db i cc(tot) = 40 ma - 16.5 - db nf min minimum noise figure f = 3500 mhz i cc(tot) = 4 ma - 2.2 - db i cc(tot) = 6 ma - 2.1 - db i cc(tot) = 12 ma - 1.9 - db i cc(tot) = 20 ma - 1.9 - db i cc(tot) = 40 ma - 2.0 - db p l(1db) output power at 1 db gain compression f = 3500 mhz i cc(tot) = 4 ma - ? 2.5 - dbm i cc(tot) = 6 ma - 0.0 - dbm i cc(tot) = 12 ma - 5.0 - dbm i cc(tot) = 20 ma - 9.0 - dbm i cc(tot) = 40 ma - 13.0 - dbm ip3 o output third-order intercept point f = 3500 mhz i cc(tot) = 4 ma - 9.0 - dbm i cc(tot) = 6 ma - 12.0 - dbm i cc(tot) = 12 ma - 17.0 - dbm i cc(tot) = 20 ma - 18.0 - dbm i cc(tot) = 40 ma - 22.0 - dbm table 8. dynamic characteristics ?continued t amb =25 ? c; v cc = 3.0 v; v enable ? 1.2 v unless otherwise specif ied. all measurements done on characterization board without matc hing, de-embedded up to the pins. symbol parameter conditions min typ max unit BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 13 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 9. enable control table 9. enable (pin 5) ? 40 ? c ? t amb ? +85 ? c v enable (v) state ? 0.4 off ? 1.2 on t amb = 25 ? c. (1) v cc = 1.5 v (2) v cc = 3 v (3) v cc = 5 v t amb = 25 ? c. (1) r bias = open (2) r bias = 12 k ? (3) r bias = 4.7 k ? (4) r bias = 2.4 k ? fig 2. supply current as a function of bias resistor; typical values fig 3. supply current as a function of supply voltage and control voltage; typical values aaa-001850 20 40 60 l cc (ma) 0 r bias () 10 10 5 10 4 10 2 10 3 (1) (2) (3) v cc , v ctrl (v) 16 5 34 2 aaa-001851 20 40 60 l cc (ma) 0 (1) (2) (3) (4) BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 14 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic t amb = 25 ? c; v cc = 3 v; p i = ? 30 dbm. (1) f = 150 mhz (2) f = 450 mhz (3) f = 900 mhz (4) f = 1500 mhz (5) f = 1900 mhz (6) f = 2400 mhz (7) f = 3500 mhz t amb = 25 ? c; f 1 =900mhz; f 2 = 900.2 mhz; p i = ? 30 dbm. (1) v cc = 1.5 v (2) v cc = 3 v (3) v cc = 5 v fig 4. insertion power gain ( ?s 21 ? 2 ) as a function of total supply current; typical values fig 5. output third-order in tercept point as a function of total supply current; typical values l cc(tot) (ma) 050 40 20 30 10 aaa-00152 20 10 30 40 |s 21 | 2 (db) 0 (1) (2) (3) (4) (6) (7) (5) l cc(tot) (ma) 040 30 10 20 aaa-00153 10 15 5 20 25 ip3 o (dbm) 0 (1) (2) (3) BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 15 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic t amb = 25 ? c; f = 900 mhz. (1) v cc = 1.5 v (2) v cc = 3 v (3) v cc = 5 v t amb = 25 ? c; i cc(tot) = 6 ma; v cc = 3 v; p i = ? 30 dbm. fig 6. output power at 1 db gain compression as a function of total supply current; typical values fig 7. insertion power gain ( ?s 21 ? 2 ) as a function of frequency; typical values l cc(tot) (ma) 040 30 10 20 aaa-00154 5 10 0 15 20 p l(1db) (dbm) -5 (1) (2) (3) f (mhz) 0 4000 3000 1000 2000 aaa-00155 10 20 30 |s 21 | 2 (db) 0 t amb = 25 ? c; i cc(tot) = 6 ma; v cc = 3 v. fig 8. minimum noise figure as a func tion of frequency; typical values f (mhz) 0 4000 3000 1000 2000 aaa-00156 1 1.5 0.5 2 2.5 nf min (db) 0 BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 16 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 10. package outline fig 9. package outline sot1209 references outline version european projection issue date iec jedec jeita sot1209 sot1209po 11-06-10 11-09-15 unit mm max nom min 1.9 1.0 0.5 1.7 a dimensions note 1. dimension a is including plating thickness. hxson6: plastic thermal enhanced super thin small outline package; no leads; 6 terminals; body 2 x 1.3 x 0.35 mm sot1209 a 1 b 0.15 1.0 dd 1 e 2 ee 1 0.15 0.35 0.04 2.1 1.2 0.25 0.25 scale l 0 1.5 mm detail x e 1 e e shape optional (6) shape optional (4) x d 1 e 2 e 1 a a 1 d e b l 5 4 6 2 3 1 terminal 1 index area terminal 1 index area 1.2 1.4 ee 1 1.2 1.4 BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 17 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 11. abbreviations 12. revision history table 10. abbreviations acronym description ac alternating current amr automated meter reading cmmb china mobile multimedia broadcasting dc direct current esd electrostatic discharge fm frequency modulation ism industrial scientific medical mmic monolithic microwave integrated circuit rf radio frequency rke remote keyless entry tpms tire-pressure monitoring system wlan wireless local area network table 11. revision history document id release date data sheet status change notice supersedes BGU6104 v.2 20120203 product data sheet - BGU6104 v.1 modifications: ? section 1 on page 1 , table 2 on page 2 , table 3 on page 2 , table 5 on page 3 , table 8 on page 5 : updated ? section 9 on page 13 : added figures BGU6104 v.1 20110921 preliminary data sheet - - BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 18 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. BGU6104 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 3 february 2012 19 of 20 nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com nxp semiconductors BGU6104 wideband silicon low-noise amplifier mmic ? nxp b.v. 2012. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 3 february 2012 document identifier: BGU6104 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 2.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 8 dynamic characteristics . . . . . . . . . . . . . . . . . . 5 9 enable control . . . . . . . . . . . . . . . . . . . . . . . . . 13 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 18 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 14 contact information. . . . . . . . . . . . . . . . . . . . . 19 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 |
Price & Availability of BGU6104
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |